Featuring a multi-layer monolithic chip design, the second-generation 905 nm pulsed laser diode provides higher efficiency (3 W/A) for further ranging and reduced power consumption, as well as an improved GaAs structure to offer typically 85 W pulsed peak power when driven at 30A for an increase of more than 20% compared to the first-generation product.

Please refer to following URL: https://www.excelitas.com/press-release/excelitas-technologies-introduces-generation-2-905-nm-high-volume-pulsed

Datasheet: Download here!

For more information please contact Seraphim's product manager, Mr.Steven Liu at +886-2-6615-8281 ext.227, or e-mail to stevenliu@seraphim.com.tw

Vendor:

Excelitas Technologies Corp